ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION TEMPERATURE

被引：10

|

作者：

BURGER, WR

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：368 / 382

页数：15

相关论文

共 50 条

[1] A LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) CHEMICAL VAPOR-DEPOSITION PROCESS FOR THE DEPOSITION OF DEVICE-QUALITY EPITAXIAL SILICON
BURGER, WR
REIF, R
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01): : 131 - 134
[2] ENHANCED ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) EPITAXIAL SILICON DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
OHI, S
BURGER, WR
REIF, R
APPLIED PHYSICS LETTERS, 1988, 53 (10) : 891 - 893
[3] ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP=775-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION RATE
BURGER, WR
REIF, R
JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 383 - 389
[4] BULK-QUALITY BIPOLAR-TRANSISTORS FABRICATED IN LOW-TEMPERATURE (TDEP=800-DEGREES-C) EPITAXIAL SILICON
BURGER, WR
REIF, R
APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1447 - 1449
[5] THE IMPACT OF LOW-TEMPERATURE (TDEP LESS-THAN 800-DEGREES-C) SILICON EPITAXY DEPOSITION CONDITIONS ON BIPOLAR-TRANSISTOR CHARACTERISTICS
BURGER, WR
REIF, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2367 - 2368
[6] Low temperature (Tdep &le 800°C) chemical vapor deposition process for the deposition of device-quality epitaxial silicon
Burger, W.R.
Reif, R.
Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1988, B1 (01): : 131 - 134
[7] IMPACT OF LOW-TEMPERATURE (TDEP less than equivalent to 800 degree C) SILICON EPITAXY DEPOSITION CONDITIONS ON BIPOLAR TRANSISTOR CHARACTERISTICS.
Burger, W.R.
Reif, R.
1600, (ED-34):
[8] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION
BURGER, WR
REIF, R
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4255 - 4268
[9] ELECTRICAL CHARACTERIZATION OF JUNCTIONS AND BIPOLAR-TRANSISTORS FORMED WITH INSITU DOPED LOW-TEMPERATURE (800-DEGREES-C) EPITAXIAL SILICON
OHI, S
BURGER, WR
REIF, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) : 128 - 134
[10] FORMATION OF EPITAXIAL COSI2 FILMS ON SI(111) A LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO 400-DEGREES-C)
HADERBACHE, L
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 223 - 229

← 1 2 3 4 5 →