CARRIER TEMPERATURE EFFECTS IN A P-N-JUNCTION

被引：4

作者：

STOKOE, TY ^{[1
]}

PARROTT, JE ^{[1
]}

机构：

[1] UNIV WALES, INST SCI & TECHNOL, DEPT APPL PHYS & ELECTR, CARDIFF, GLAMORGANSHIRE, WALES

来源：

关键词：

D O I：

10.1016/0038-1101(75)90162-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：811 / 814

页数：4

共 50 条

[31] EFFECTS OF DISPLACED P-N-JUNCTION OF HETEROJUNCTION BIPOLAR-TRANSISTORS
ZHANG, QM
TAN, GL
MOORE, WT
XU, JM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2430 - 2437
[32] THE EFFECTS OF X-RAYS ON P-N-JUNCTION LEAKAGE CURRENTS
TANG, DD
HACKBARTH, E
MALDONADO, JR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2587 - 2591
[33] THE FORWARD BIASED, ABRUPT P-N-JUNCTION
GUCKEL, H
DEMIRKOL, A
THOMAS, D
IYENGAR, S
SOLID-STATE ELECTRONICS, 1982, 25 (02) : 105 - 113
[34] THERO-PHOTOELECTRIC EFFECTS IN A P-N-JUNCTION WITH HOT CARRIERS
DADAMIRZAEV, G
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1344 - 1346
[35] THE BARRIER THERMAL EMF AT A P-N-JUNCTION
BALMUSH, II
DASHEVSKII, ZM
KASIYAN, AI
SEMICONDUCTORS, 1995, 29 (10) : 937 - 941
[36] CATALYTIC EFFECT ON SURFACE OF A P-N-JUNCTION
FEDOROV, GG
PRUDNIKO.RV
KISELEV, VF
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01): : K19 - K21
[37] MULTIPLICATION OF PHOTOCARRIERS IN A P-N-JUNCTION FIELD
GUSARINA, GD
TARKHIN, DV
KOLCHINA, TL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1144 - +
[38] P-N-JUNCTION MICROWAVE PHASE MODULATORS
NAVARROSTEVENSON, S
ACTA CIENTIFICA VENEZOLANA, 1978, 29 : 118 - 118
[39] THERMODYNAMIC CONSIDERATIONS OF P-N-JUNCTION CAPACITANCE
HEALD, DL
ORDUNG, PF
SKALNIK, JG
NANSEN, EN
SOLID-STATE ELECTRONICS, 1973, 16 (09) : 1055 - 1065
[40] CITATION CLASSIC - P-N-JUNCTION LASERS
BURNS, G
CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1980, (09): : 14 - 14