PASSIVATION OF IMPURITIES AND RADIATION DEFECTS BY HYDROGEN IN P-TYPE SILICON

被引：0
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作者：
MUKASHEV, BN
TOKMOLDIN, SZ
TAMENDAROV, MF
ABDULLIN, KA
CHIKHRAI, EV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：643 / 646
页数：4
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