EPITAXY OF COSI2 ON SI (111) AT LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO 400-DEGREES-C)

被引：24

|

作者：

HADERBACHE, L

WETZEL, P

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

GEWINNER, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.100456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1384 / 1386

页数：3

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