EPITAXY OF COSI2 ON SI (111) AT LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO 400-DEGREES-C)

被引：24
|
作者：
HADERBACHE, L
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期
关键词：
D O I：
10.1063/1.100456
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1384 / 1386
页数：3
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