A low-cost uncooled infrared aluminum microbolometer in a standard CMOS technology

被引:0
|
作者
Shen, Ning [1 ]
Tang, Zhen'an [1 ]
Feng, Chong [1 ]
机构
[1] Dalian Univ Technol, Coll Elect Sci & Technol, Dalian 116023, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
CMOS infrared detectors; aluminum microbolometer; low-cost infrared detectors; readout integrated circuits;
D O I
10.1177/1740349913491245
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article introduces the implementation of a low-cost 4 x 5 pixel array uncooled infrared microbolometer together with its integrated readout circuit in a standard 0.5-mu m CMOS technology and post-CMOS process. Each pixel, which has a size of 80 mu m x 80 mu m, is a novel structure of aluminum microbolometer fabricated by etching the surface sacrificial layer without any additional masking and lithography procedure. The aluminum microbolometer consists of an aluminum thermistor and a thermally isolated micromachined membrane suspended by two arms. The thermal conductance, thermal time constant, thermal capacitance, and responsivity of the aluminum microbolometer are experimentally measured.
引用
收藏
页码:114 / 118
页数:5
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