HIGH-TEMPERATURE OPERATION OF INGAAS/INGAASP COMPRESSIVE-STRAINED QW LASERS WITH LOW-THRESHOLD CURRENTS

被引：6
|
作者：
NOBUHARA, H
TANAKA, K
YAMAMOTO, T
MACHIDA, T
FUJII, T
WAKAO, K
机构：
[1] Optical Devices Laboratory, Optical Interconnection Division, Fujitsu Laboratories Ltd.
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期
关键词：
D O I：
10.1109/68.257158
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the influence of the band gap wavelength of barrier layers and separate confinement heterostructure (SCH) layers lambda(SCH) on the high-temperature operation of InGaAs/InGaAsP compressive-strained quantum-well (QW) lasers. The optimum lambda(SCH) was 1.2 mum, at which carriers were sufficiently confined into quantum wells. The QW laser with lambda(SCH) = 1.2 mum exhibited low threshold currents of 2.3 mA at 20-degrees-C and 9.7 mA at 100-degrees-C and CW lasing up to 150-degrees-C.
引用
收藏
页码：961 / 962
页数：2
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