W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

被引：1

作者：

Xu Peng ^{[1
]}

Song Xubo ^{[1
]}

Lu Yuanjie ^{[1
]}

Wang Yuangang ^{[1
]}

Dun Shaobo ^{[1
]}

Yin Jiayun ^{[1
]}

Fang Yulong ^{[1
]}

Gu Guodong ^{[1
]}

Feng Zhihong ^{[1
]}

Cai Shujun ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 08期

基金：

中国国家自然科学基金;

关键词：

W-band; MMIC; GaN; power amplifier;

D O I：

10.1088/1674-4926/36/8/085009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth. Those performances were measured at drain bias of 12 V.

引用

页数：3

共 50 条

[1] W-band GaN MMIC PA with 257 mW output power at 86.5 GHz
徐鹏
宋旭波
吕元杰
王元刚
敦少博
尹甲运
房玉龙
顾国栋
冯志红
蔡树军
[J]. Journal of Semiconductors, 2015, 36 (08) : 175 - 177
[2] W-Band GaN MMIC with 842 mW Output Power at 88 GHz
Micovic, M.
Kurdoghlian, A.
Shinohara, K.
Burnham, S.
Hu, I. Milosavljevic M.
Corrion, A.
Fung, A.
Lin, R.
Samoska, L.
Kangaslahti, P.
Lambrigtsen, B.
Goldsmith, P.
Wong, W. S.
Schmitz, A.
Hashimoto, P.
Willadsen, P. J.
Chow, D. H.
[J]. 2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 237 - 239
[3] W-band AlGaN/GaN MMIC PA with 3.1W Output Power
Wu Shaobing
Guo Fangjin
Gao Jianfeng
Wang Weibo
Li Zhonghui
Huang Nianning
Chen Tangsheng
[J]. 2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), 2017, : 219 - 223
[4] W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology
van Heijningen, M.
Rodenburg, M.
van Vliet, F. E.
Massler, H.
Tessmann, A.
Brueckner, P.
Mueller, S.
Schwantuschke, D.
Quay, R.
Narhi, T.
[J]. 2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 135 - 138
[5] W-band 3.4 W/mm GaN power amplifier MMIC
Ge, Qin
Xu, Bo
Tao, Hongqi
Wang, Weibo
Ma, Xiaohua
Guo, Fangjin
Liu, Yu
[J]. Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 2020, 47 (01): : 24 - 29
[6] W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology
Wu Shaobing
Gao Jianfeng
Wang Weibo
Zhang Junyun
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (10) : 3882 - 3886
[7] GaN MMIC Amplifiers for W-band Transceivers
Masuda, Satoshi
Ohki, Toshihiro
Makiyama, Kozo
Kanamura, Masahito
Okamoto, Naoya
Shigematsu, Hisao
Imanishi, Kenji
Kikkawa, Toshihide
Joshin, Kazukiyo
Hara, Naoki
[J]. 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 443 - +
[8] GaN MMIC Amplifiers for W-band Transceivers
Masuda, Satoshi
Ohki, Toshihiro
Makiyama, Kozo
Kanamura, Masahito
Okamoto, Naoya
Shigematsu, Hisao
Imanishi, Kenji
Kikkawa, Toshihide
Joshin, Kazukiyo
Hara, Naoki
[J]. 2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2009, : 1796 - +
[9] W-band Metamorphic HEMT with 267 mW output power
Herrick, KJ
Brown, KW
Rose, FA
Whelan, CS
Kotce, J
Laroche, JR
Zhang, YW
[J]. 2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 843 - 846
[10] W-Band, Broadband 2W GaN MMIC
Schellenberg, James
Kim, Bumjin
Phan, Trong
[J]. 2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,

← 1 2 3 4 5 →