UREA SENSITIVE FIELD-EFFECT TRANSISTORS BASED ON DITHIO GROUP-CONTAINING LANGMUIR-BLODGETT MEMBRANES

被引:10
|
作者
LEE, S [1 ]
ANZAI, J [1 ]
OSA, T [1 ]
机构
[1] TOHOKU UNIV, INST PHARMACEUT, SENDAI, MIYAGI 980, JAPAN
关键词
D O I
10.1246/bcsj.64.2019
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2-(Octadecyldithio)pyridine (1) and 5-(octadecyldithio)-2-nitrobenzoic acid (2) were synthesized in order to prepare Langmuir-Blodgett (LB) membranes which possess reactive dithio groups on the surface for further modification with enzymes. The monolayer membrane, composed of 1 or 2, was deposited successfully on an ion-sensitive field effect transistor, and the membrane surface was modified with urease covalently by a thiol-disulfide exchange reaction. The LB membrane-based sensor 2 showed a better potentiometric response to urea than that of the membrane-based sensor 1. The results are discussed on the basis of the reactivity of the dithio groups to urease at the membrane surface.
引用
收藏
页码:2019 / 2021
页数:3
相关论文
共 50 条
  • [21] Easily Processable Highly Ordered Langmuir-Blodgett Films of Quaterthiophene Disiloxane Dimer for Mono layer Organic Field-Effect Transistors
    Sizov, Alexey S.
    Anisimov, Daniil S.
    Agina, Elena V.
    Borshchey, Oleg V.
    Bakirov, Artem V.
    Shcherbina, Maxim A.
    Grigorian, Souren
    Bruevich, Vladimir V.
    Chvalun, Sergei N.
    Paraschuk, Dmitry Yu.
    Ponomarenko, Sergei A.
    LANGMUIR, 2014, 30 (50) : 15327 - 15334
  • [22] Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor
    Matsui, J
    Yoshida, S
    Mikayama, T
    Aoki, A
    Miyashita, T
    LANGMUIR, 2005, 21 (12) : 5343 - 5348
  • [23] MOLECULAR FIELD-EFFECT TRANSISTORS USING CONDUCTING POLYMER LANGMUIR-BLODGETT-FILMS
    PALOHEIMO, J
    KUIVALAINEN, P
    STUBB, H
    VUORIMAA, E
    YLILAHTI, P
    APPLIED PHYSICS LETTERS, 1990, 56 (12) : 1157 - 1159
  • [24] A GAS SENSOR FABRICATED WITH FIELD-EFFECT TRANSISTORS AND LANGMUIR-BLODGETT-FILM OF PORPHYRIN
    SUN, LY
    GU, CZ
    KE, W
    CHAO, XZ
    LI, TJ
    HU, GY
    SUN, JY
    THIN SOLID FILMS, 1992, 210 (1-2) : 486 - 488
  • [25] FIELD-EFFECT TRANSISTOR BASED ON ORGANOMETALLIC LANGMUIR-BLODGETT-FILM
    PEARSON, C
    GIBSON, JE
    MOORE, AJ
    BRYCE, MR
    PETTY, MC
    ELECTRONICS LETTERS, 1993, 29 (15) : 1377 - 1378
  • [26] INGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LANGMUIR-BLODGETT DEPOSITED GATE STRUCTURE
    CHAN, WK
    CHANG, GK
    BHAT, R
    SCHLOTTER, NE
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 220 - 222
  • [27] Fabrication of field-effect transistor using charge-transfer-complex Langmuir-Blodgett films
    Sakuma, H
    Iizuka, M
    Nakamura, M
    Kudo, K
    Tanaka, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4B): : 2727 - 2729
  • [28] Aligned Carbon Nanotube Field Effect Transistors by Repeated Compression-Expansion Cycles in Langmuir-Blodgett
    Gao, Yubo
    Deng, Yanyan
    Liaol, Zhiqiang
    Zhang, Min
    2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2017, : 731 - 734
  • [29] Radiation sensitive detector based on field-effect transistors
    Vikulin I.M.
    Gorbachev V.E.
    Nazarenko A.A.
    Radioelectronics and Communications Systems, 2017, 60 (9) : 401 - 404
  • [30] Enhanced sensitivity of an organic field-effect transistor pH sensor using a fatty acid Langmuir-Blodgett film
    Ritjareonwattu, Supachai
    Yun, Youngjun
    Pearson, Christopher
    Petty, Michael C.
    ORGANIC ELECTRONICS, 2010, 11 (11) : 1792 - 1795