THE SCHOTTKY-BARRIER OF SN ON GAAS(110)

被引:7
|
作者
MATTERNKLOSSON, M
LUTH, H
机构
关键词
D O I
10.1016/0039-6028(85)90955-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:610 / 616
页数:7
相关论文
共 50 条
  • [21] CVD WSIX/GAAS SCHOTTKY-BARRIER
    HARA, T
    SUGA, A
    ICHIKAWA, R
    YAMAI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : C538 - C538
  • [22] GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
    CALVIELLO, JA
    MICROWAVE JOURNAL, 1979, 22 (09) : 92 - &
  • [23] CHEMISTRY OF SCHOTTKY-BARRIER FORMATION ON GAAS
    WALDROP, JR
    GRANT, RW
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 731 - 731
  • [24] GAAS SCHOTTKY-BARRIER AVALANCHE DIODES
    KIM, CK
    ARMSTRON.LD
    SOLID-STATE ELECTRONICS, 1970, 13 (01) : 53 - &
  • [25] KINETICS OF SCHOTTKY-BARRIER FORMATION - AU ON LOW-TEMPERATURE GAAS(110)
    STILES, K
    KAHN, A
    KILDAY, DG
    MARGARITONDO, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1527 - 1528
  • [26] UNUSUAL INTERFACIAL KINETICS AND SCHOTTKY-BARRIER FORMATION OF THALLIUM ON THE GAAS(110) SURFACE
    KENDELEWICZ, T
    PETRO, WG
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 583 - 584
  • [27] THE EFFECT OF SURFACE OXYGEN ON THE INTERMIXING AND SCHOTTKY-BARRIER AT GAAS(110)-AU INTERFACES
    LU, ZM
    PETRO, WG
    MAHOWALD, PH
    OSHIMA, M
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 598 - 601
  • [28] THE SURFACE AND SCHOTTKY-BARRIER IN GAAS AND INP
    PALAU, JM
    ISMAIL, A
    LASSABATERE, L
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (226): : 137 - 147
  • [29] SCHOTTKY-BARRIER BEHAVIOR IN POLYCRYSTAL GAAS
    COHEN, MJ
    PAUL, MD
    MILLER, DL
    WALDROP, JR
    HARRIS, JS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 899 - 903
  • [30] GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
    CALVIELLO, JA
    MICROWAVE JOURNAL, 1979, 22 (08) : 53 - &