XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE

被引：114
|
作者：
IWAKURO, H [1 ]
TATSUYAMA, C [1 ]
ICHIMURA, S [1 ]
机构：
[1] TOYAMA UNIV,FAC ENGN,DEPT ELECTR,TAKAOKA,TOYAMA,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.1143/JJAP.21.94
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：94 / 99
页数：6
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