PHOTO-DEEP-LEVEL FOURIER SPECTROSCOPY IN SEMI-INSULATING BULK MATERIALS

被引：4
|
作者：
IKEDA, K
TAKAOKA, H
ISHII, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1985年 / 24卷 / 11期
关键词：
D O I：
10.1143/JJAP.24.1454
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1454 / 1458
页数：5
相关论文
共 50 条
  • [31] The effects of deep level traps on the electrical properties of semi-insulating CdZnTe
    Zha, Gangqiang
    Yang, Jian
    Xu, Lingyan
    Feng, Tao
    Wang, Ning
    Jie, Wanqi
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (04)
  • [32] The effects of deep level traps on the electrical properties of semi-insulating CdZnTe
    [J]. Zha, Gangqiang, 1600, American Institute of Physics Inc. (115):
  • [33] Deep-level photoluminescence in semi-insulating CdTe(In) and CdTe(Sn)
    Franc, Jan
    Hlidek, Pavel
    Belas, Eduard
    Kubat, Jan
    Elhadidy, Hassan
    Fesh, Roman
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 591 (01): : 196 - 199
  • [34] Narrow, deep level cathodoluminescence emission from semi-insulating GaAs
    Radhakrishnan, JK
    Salviati, G
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (02) : 197 - 199
  • [35] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR
    KAUFMANN, U
    SCHNEIDER, J
    [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (02) : 143 - 146
  • [36] WAVELENGTH MODULATION ABSORPTION-SPECTROSCOPY OF DEEP LEVELS IN SEMI-INSULATING GAAS
    EETEMADI, SM
    BRAUNSTEIN, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2217 - 2224
  • [37] Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
    Kaminski, P
    Pawlowski, M
    Cwirko, R
    Palczewska, M
    Kozlowski, R
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 213 - 216
  • [38] An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy
    Suproniuk, Marek
    Kaminski, Pawel
    Miczuga, Marcin
    Pawlowski, Michal
    Kozlowski, Roman
    Longeaud, Christophe
    Kleider, Jean-Paul
    [J]. PRZEGLAD ELEKTROTECHNICZNY, 2009, 85 (11): : 93 - 98
  • [39] Dielectric spectroscopy of semi-insulating gallium arsenide
    Jonscher, AK
    Pickup, C
    Zaidi, SH
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 71 - 92
  • [40] Mechanisms of the semi-insulating of InP by anelastic spectroscopy
    Cantelli, R
    Cordero, F
    Palumbo, O
    Cannelli, G
    Trequattrini, F
    Guadalupi, GM
    Molinas, B
    [J]. PHYSICAL REVIEW B, 2000, 62 (03) : 1828 - 1834
12345