FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES

被引:427
|
作者
TUNG, RT
GIBSON, JM
POATE, JM
机构
关键词
D O I
10.1103/PhysRevLett.50.429
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:429 / 432
页数:4
相关论文
共 50 条
  • [2] SINGLE-CRYSTAL SI/NISI2/SI(100) STRUCTURES
    TUNG, RT
    EAGLESHAM, DJ
    SCHREY, F
    SULLIVAN, JP
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8250 - 8257
  • [3] Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111)
    Nagao, T
    Doi, T
    Sekiguchi, T
    Hasegawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4567 - 4570
  • [4] Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111)
    Nagao, Tadaaki
    Doi, Takumi
    Sekiguchi, Takeharu
    Hasegawa, Shuji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4567 - 4570
  • [5] GROWTH OF ULTRATHIN SINGLE-CRYSTAL NISI2 LAYERS ON SI(111)
    TUNG, RT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1840 - 1844
  • [6] SILICIDE FORMATION IN MO THIN-FILMS AND SI SINGLE-CRYSTAL INTERACTIONS
    BOUABELLOU, A
    HALIMI, R
    BECHIRI, A
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1993, (130): : 335 - 338
  • [7] THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES
    OSSICINI, S
    BISI, O
    BERTONI, CM
    VACUUM, 1990, 41 (1-3) : 681 - 683
  • [8] Formation of ultrathin iron silicide layers on the single-crystal silicon surface
    Gomoyunova, M. V.
    Malygin, D. E.
    Pronin, I. I.
    PHYSICS OF THE SOLID STATE, 2006, 48 (10) : 2016 - 2020
  • [9] Formation of ultrathin iron silicide layers on the single-crystal silicon surface
    M. V. Gomoyunova
    D. E. Malygin
    I. I. Pronin
    Physics of the Solid State, 2006, 48 : 2016 - 2020
  • [10] SILICIDE FORMATION BY REACTION OF TA-TI THIN-FILMS AND A SI SINGLE-CRYSTAL
    DAHAN, R
    PELLEG, J
    ZEVIN, L
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) : 2885 - 2889