Single-crystal Si/NiSi2/Si(100) structures

被引：0
|
作者：
机构：
来源：
| 1600年 / 73期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] SINGLE-CRYSTAL SI/NISI2/SI(100) STRUCTURES
    TUNG, RT
    EAGLESHAM, DJ
    SCHREY, F
    SULLIVAN, JP
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8250 - 8257
  • [2] GROWTH OF SINGLE-CRYSTAL NISI2 LAYERS ON SI (110)
    TUNG, RT
    NAKAHARA, S
    BOONE, T
    APPLIED PHYSICS LETTERS, 1985, 46 (09) : 895 - 897
  • [3] GROWTH OF ULTRATHIN SINGLE-CRYSTAL NISI2 LAYERS ON SI(111)
    TUNG, RT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1840 - 1844
  • [4] EPITAXIAL NISI2 FILMS ON SI(100)
    TEICHERT, S
    BRETSCHNEIDER, W
    HELMS, H
    BEDDIES, G
    FRANKE, T
    LANGE, C
    THIN SOLID FILMS, 1993, 229 (02) : 137 - 139
  • [5] HOMOGENEOUS HETEROEPITAXIAL NISI2 FORMATION ON (100)SI
    KUNISHIMA, I
    SUGURO, K
    AOYAMA, T
    MATSUNAGA, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2329 - L2332
  • [6] Effect of the crystallographic orientation of the surface of single-crystal Si wafers on the endotaxial growth of NiSi2 nanoplates
    Schuitek, Thiago Paulino
    da Silva Costa, Daniel
    Pereira Mattoso Filho, Ney
    Kellermann, Guinther
    Journal of Applied Crystallography, 2024, 57 : 1426 - 1435
  • [7] CONTROL OF INTERFACIAL MORPHOLOGY - NISI2/SI(100)
    SULLIVAN, JP
    TUNG, RT
    SCHREY, F
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 478 - 489
  • [8] Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface
    Q. T. Zhao
    S. B. Mi
    C. L. Jia
    C. Urban
    C. Sandow
    S. Habicht
    S. Mantl
    Journal of Materials Research, 2009, 24 : 135 - 139
  • [9] Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface
    Zhao, Q. T.
    Mi, S. B.
    Jia, C. L.
    Urban, C.
    Sandow, C.
    Habicht, S.
    Mantl, S.
    JOURNAL OF MATERIALS RESEARCH, 2009, 24 (01) : 135 - 139
  • [10] Effect of the crystallographic orientation of the surface of single-crystal Si wafers on the endotaxial growth of NiSi2 nanoplates
    Schuitek, Thiago Paulino
    Costa, Daniel da Silva
    Mattoso Filho, Ney Pereira
    Kellermann, Guinther
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2024, 57 : 1426 - 1435
12345