DEPLETION LAYER COLLECTION EFFICIENCY FOR P-N-JUNCTION, SCHOTTKY DIODE, AND SURFACE INSULATOR SOLAR CELLS

被引：32

作者：

GREEN, MA ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH ELECT ENGN,DEPT SOLID STATE ELECTRON,SYDNEY,NEW S WALES,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.322658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：547 / 554

页数：8

共 50 条

[31] DETERMINATION OF LIFETIME AND SURFACE RECOMBINATION VELOCITY OF P-N-JUNCTION SOLAR-CELLS AND DIODES BY OBSERVING TRANSIENTS
LINDHOLM, FA
LIOU, JJ
NEUGROSCHEL, A
JUNG, TW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 277 - 285
[32] A NEW THEORETICAL-MODEL FOR A P-N-JUNCTION REALISTIC DIODE
KHAN, WI
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (12) : 1221 - 1225
[33] ELECTROCHEMICAL FABRICATION OF A POLYPYRROLE-POLYTHIOPHENE P-N-JUNCTION DIODE
AIZAWA, M
YAMADA, T
SHINOHARA, H
AKAGI, K
SHIRAKAWA, H
[J]. JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1986, (17) : 1315 - 1317
[34] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION
KANBE, H
SUSA, N
NAKAGOME, H
ANDO, H
[J]. ELECTRONICS LETTERS, 1980, 16 (05) : 163 - 165
[35] THE PHYSICS OF P-N-JUNCTION SOLAR-CELLS OPERATED UNDER CONCENTRATED SUNLIGHT
DHARIWAL, SR
MATHUR, RK
MEHROTRA, DR
MITTAL, S
[J]. SOLAR CELLS, 1983, 8 (02): : 137 - 155
[36] DEPENDENCE OF SERIES RESISTANCE ON OPERATING CURRENT IN P-N-JUNCTION SOLAR-CELLS
BHATTACHARYA, DK
MANSINGH, A
SWARUP, P
[J]. SOLAR CELLS, 1986, 18 (02): : 153 - 162
[37] THEORETICAL CALCULATIONS OF DEBYE LENGTH, BUILT-IN POTENTIAL AND DEPLETION LAYER WIDTH VERSUS DOPANT DENSITY IN A HEAVILY DOPED P-N-JUNCTION DIODE
TENG, KW
LI, SS
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (03) : 277 - 285
[38] METHODOLOGY FOR EXPERIMENTALLY BASED DETERMINATION OF GAP SHRINKAGE AND EFFECTIVE LIFETIMES IN EMITTER AND BASE OF P-N-JUNCTION SOLAR-CELLS AND OTHER P-N-JUNCTION DEVICES
LINDHOLM, FA
NEUGROSCHEL, A
SAH, CT
GODLEWSKI, MP
BRANDHORST, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 402 - 410
[39] THE P-I-N JUNCTION SURFACE DEPLETION-LAYER PHOTODIODE
YIN, CS
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 442 - 443
[40] PHYSICAL MODELS FOR RECOMBINATION CURRENTS IN POLYCRYSTALLINE SILICON P-N-JUNCTION SOLAR-CELLS
FOSSUM, JG
NEUGROSCHEL, A
LINDHOLM, FA
MAZER, JA
[J]. SOLAR CELLS, 1980, 1 (03): : 302 - 304

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