INFLUENCE OF INAPPROPRIATE PROCESSES ON GROWTH OF SILICON EPITAXIAL LAYERS

被引：2

作者：

AHARONI, H ^{[1
]}

机构：

[1] UNIV NEGEV,DEPT ELECT ENGN,MICROELECTR,BEER SHEVA,ISRAEL

来源：

VACUUM | 1976年 / 26卷 / 4-5期

关键词：

D O I：

10.1016/S0042-207X(76)80003-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 157

页数：9

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