ELECTRONIC EIGENSTATES AND INTER-SUB-BAND TRANSITIONS IN DOPED HETEROSTRUCTURE SUPERLATTICES

被引：8

|

作者：

ZACHAU, M

机构：

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 09期

关键词：

D O I：

10.1088/0268-1242/3/9/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：879 / 885

页数：7

相关论文

共 32 条

[31] Intra- and inter-configurational electronic transitions of Ce3+-doped Y2SiO5 : Spectroscopy and crystal field analysis
Alizadeh, Y.
Martin, J. L. B.
Reid, M. F.
Wells, J-P R.
[J]. OPTICAL MATERIALS, 2021, 117
[32] Relationship between the oscillator strength values and average band energies of the electronic transitions of some lanthanoid(III) ions doped in different environments and their ground state J designations
Singhai, R
Limaye, SN
Saxena, MC
[J]. SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1997, 53 (03) : 353 - 359

← 1 2 3 4 →