CL INCORPORATION AT THE SI/SIO2 INTERFACE DURING THE OXIDATION OF SI IN HCL/O2 AMBIENTS

被引：0
|
作者：
TSAI, HL
GALE, RO
WILLIAMS, DB
BUTLER, SR
KRANER, HW
JONES, KW
MAGEE, CW
机构：
[1] LEHIGH UNIV, BETHLEHEM, PA 18015 USA
[2] BROOKHAVEN NATL LAB, UPTON, NY 11973 USA
[3] RCA CORP LABS, PRINCETON, NJ 08540 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期
关键词：
D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C328 / C329
页数：2
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