EFFECT OF A-SINX-H COMPOSITION ON BAND BENDING NEAR THE INTERFACE OF A-SI-H/A-SINX-H LAYERED STRUCTURES

被引：8
|
作者：
HIRANAKA, K
YOSHIMURA, T
YAMAGUCHI, T
YANAGISAWA, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期
关键词：
D O I：
10.1063/1.337507
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4204 / 4208
页数：5
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