EFFECT OF A-SINX-H COMPOSITION ON BAND BENDING NEAR THE INTERFACE OF A-SI-H/A-SINX-H LAYERED STRUCTURES

被引：8

|

作者：

HIRANAKA, K

YOSHIMURA, T

YAMAGUCHI, T

YANAGISAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.337507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4204 / 4208

页数：5

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