ELECTRONIC DENSITY OF STATES OF AMORPHOUS-III-V SEMICONDUCTORS

被引：1

作者：

JOANNOPOULOS, JD

COHEN, ML

机构：

[1] UNIV CALIF, DEPT PHYS, BERKELEY, CA 94720 USA

[2] LAWRENCE BERKELEY LAB, INORG MAT RES DIV, BERKELEY, CA 94720 USA

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 15卷 / 02期

关键词：

D O I：

10.1016/0038-1098(74)90718-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：105 / 108

页数：4

共 50 条

[21] DENSITY OF LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
DELADURANTAYE, L
LEPINE, Y
LEWIS, LJ
CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 425 - 429
[22] EFFECTS OF DISORDER ON ELECTRONIC DENSITY OF STATES OF III-V COMPOUNDS
JOANNOPOULOS, JD
COHEN, ML
PHYSICAL REVIEW B, 1974, 10 (04) : 1545 - 1559
[23] Density of electronic states in amorphous carbons
Fanchini, G
Ray, SC
Tagliaferro, A
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 891 - 899
[24] Electronic density of states in amorphous selenium
Benkhedir, ML
Brinza, M
Adriaenssens, GJ
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (44) : S5253 - S5264
[25] ELECTRONIC STATES OF SELECTED DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS.
Hemstreet, L.A.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 116 - 120
[26] PAIRS OF INTRINSIC DEFECTS IN III-V SEMICONDUCTORS - ELECTRONIC STATES AND INTERACTION ENERGIES
REINECKE, TL
PHYSICA B & C, 1983, 117 (MAR): : 194 - 196
[27] DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE III-V AND II-VI SEMICONDUCTORS
SHEVCHIK, NJ
TEJEDA, J
CARDONA, M
PHYSICAL REVIEW B, 1974, 9 (06): : 2627 - 2648
[28] SINGLE AND PAIR ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
NGAI, KL
REINECKE, TL
ECONOMOU, EN
PHYSICAL REVIEW B, 1978, 17 (02) : 790 - 806
[29] DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
DAVIS, EA
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 113 - 123
[30] ELECTRONIC PROPERTIES AND LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
OWEN, AE
SPEAR, WE
PHYSICS AND CHEMISTRY OF GLASSES, 1976, 17 (05): : 174 - 192

← 1 2 3 4 5 →