RADIATION-INDUCED DEFECTS ON SI-SIO2 INTERFACE

被引：2

作者：

PETR, I

机构：

来源：

关键词：

D O I：

10.1007/BF02168072

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：257 / 262

页数：6

共 50 条

[21] METASTABILITIES OF SI-SIO2 INTERFACE
WHITE, CT
NGAI, KL
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 462 - 463
[22] MORPHOLOGY OF SI-SIO2 INTERFACE
SUGANO, T
CHEN, JJ
HAMANO, T
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 154 - 166
[23] THE DOPED SI-SIO2 INTERFACE
SNEL, J
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 135 - 139
[24] Structure of the Si-SiO2 interface
Plucinski, KJ
[J]. EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 191 - 195
[25] THE ROUGHNESS OF THE SI-SIO2 INTERFACE
HUANG, BZ
YU, YZ
HONG, GG
[J]. CHINESE PHYSICS, 1988, 8 (02): : 300 - 307
[26] HYDROGEN INDUCED SURFACE STATES AT SI-SIO2 INTERFACE
ZAININGER, KH
WARFIELD, G
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 972 - &
[27] RADIATION-INDUCED DEGRADATION OF SI/SIO2 STRUCTURES AND THE NATURE OF DEFECTS
FUSSEL, W
SCHMIDT, M
FLIETNER, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 238 - 242
[28] INVERSION LAYER TRANSPORT AND RADIATION HARDNESS OF SI-SIO2 INTERFACE
PEPPER, M
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1283 - 1287
[29] RADIATION-INDUCED INTERFACE TRAPS IN MO/SIO2/SI CAPACITORS
NISHIOKA, Y
DASILVA, EF
MA, TP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1166 - 1171
[30] CHEMICAL-KINETICS OF HYDROGEN AND (111) SI-SIO2 INTERFACE DEFECTS
BROWER, KL
MYERS, SM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (02) : 162 - 164