RADIATION-INDUCED DEFECTS ON SI-SIO2 INTERFACE

被引：2
|
作者：
PETR, I
机构：
来源：
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 1985年 / 95卷 / 04期
关键词：
D O I：
10.1007/BF02168072
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：257 / 262
页数：6
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