RESONANT TUNNELING OF HOLES IN ALAS GAAS TRIPLE BARRIER DIODES

被引：15
|
作者：
NAKAGAWA, T
FUJITA, T
MATSUMOTO, Y
KOJIMA, T
OHTA, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期
关键词：
D O I：
10.1063/1.98003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：974 / 976
页数：3
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