SELF-CONSISTENT MODEL FOR AMBIPOLAR TUNNELING IN QUANTUM-WELL SYSTEMS

被引：8
|
作者：
PRESILLA, C
EMILIANI, V
FROVA, A
机构：
[1] Dipartimento di Fisica, Rome Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 05期
关键词：
D O I：
10.1088/0268-1242/10/5/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a self-consistent approach to describe ambipolar tunnelling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunnelling from a near-surface quantum well to surface states. The results of the model compare very well with the behaviour observed in photoluminescence experiments in InGaAs/InP asymmetric double quantum wells and in near-surface AlGaAs/GaAs single quantum wells.
引用
收藏
页码：577 / 585
页数：9
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