The Deposition Environment Controlling Method: A Vapor-Phase Solvent-Assisted Approach to Fabricate High-Quality Crystalline Perovskite

被引:2
|
作者
Kuo, Po-Tsun [1 ]
Lin, Shang-Pang [1 ]
Hsu, Hung-Chang [1 ]
Lin, Ching-Fuh [2 ,3 ]
机构
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Engn Dept Elect Engn, Grad Inst Elect, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Innovat Photon Adv Res Ctr, Taipei 10617, Taiwan
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 03期
关键词
Chlorobenzene (CB); deposition environment controlling (DEC) method; perovskite solar cell; SOLAR-CELLS; HIGH-PERFORMANCE; EFFICIENT;
D O I
10.1109/JPHOTOV.2018.2809464
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The deposition environment controlling (DEC) method is explored to enhance the carrier-extracting ability of a light-absorbing layer for perovskite solar cells. Inspired by the solvent engineering, the DEC method, an exquisite-controlled approach, is applied in vapor deposition for generating the CH3NH3 PbI3. This method not only gives the excellent uniformity, coverage of the film, and glove box free for all the solution-based and annealing steps, but also provides an easy but accurate control of the additive solvent, compared with the traditional solvent engineering. Here, chlorobenzene (CB) is introduced to the sandwich deposition technique process. The vaporized CB, which does not dissolve CH3NH3 I, PbI2, and CH3NH(3)PbI(3), offers a thermodynamic driving force to rapidly and continuously generate CH3NH3PbI3 without forming the intermediate phase. The homogenous film and less defects of crystalline perovskite are yielded. As a result, the maximum grain size exceeds 1 mu m along the lateral direction and significantly improves the hole-electron dissociation. V-oc is improved to 0.99 V, J(sc) to 18.89 mA/cm(2), and fill factor to 79.03%, yielding a 14.62% efficiency.
引用
收藏
页码:777 / 782
页数:6
相关论文
共 50 条
  • [31] HIGH-QUALITY SINGLE AND DOUBLE 2-DIMENSIONAL ELECTRON GASES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    CHUI, HC
    HAMMONS, BE
    SIMMONS, JA
    HARFF, NE
    SHERWIN, ME
    APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1911 - 1913
  • [32] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
    AMANO, H
    SAWAKI, N
    AKASAKI, I
    TOYODA, Y
    APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
  • [33] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY
    MILLER, BI
    SCHUBERT, EF
    KOREN, U
    OURMAZD, A
    DAYEM, AH
    CAPIK, RJ
    APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1384 - 1386
  • [34] Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
    Y.A. Xi
    K.X. Chen
    F. Mont
    J.K. Kim
    E.F. Schubert
    C. Wetzel
    W. Liu
    X. Li
    J.A. Smart
    Journal of Electronic Materials, 2007, 36 : 533 - 537
  • [35] High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
    Sagnes, I
    Prévot, I
    Patriarche, G
    Le Roux, G
    Gayral, B
    Lemaître, A
    Gérard, JM
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 524 - 529
  • [36] Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
    Shibata, Takumi
    Sone, Hiroki
    Yahashi, Katsunori
    Yamaguchi, Masahito
    Hiramatsu, Kazumasa
    Sawaki, Nobuhiko
    Itoh, Nobuo
    Journal of Crystal Growth, 189-190 : 67 - 71
  • [37] HYDRIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING A ZNO BUFFER LAYER
    DETCHPROHM, T
    HIRAMATSU, K
    AMANO, H
    AKASAKI, I
    APPLIED PHYSICS LETTERS, 1992, 61 (22) : 2688 - 2690
  • [38] HIGH-QUALITY ZNSE FILMS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING METHYLALKYLS
    YOKOGAWA, T
    OGURA, M
    KAJIWARA, T
    APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1065 - 1067
  • [39] HIGH-QUALITY INGAAS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING A VERTICAL REACTOR
    OISHI, M
    NOJIMA, S
    KUROIWA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L625 - L627
  • [40] Optimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxy
    Xi, Y. A.
    Chen, K. X.
    Mont, F.
    Kim, J. K.
    Schubert, E. F.
    Wetzel, C.
    Liu, W.
    Li, X.
    Smart, J. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 533 - 537