INVESTIGATION OF THE INFLUENCE OF IRRADIATION WITH FAST ELECTRONS ON ELECTROPHYSICAL PROPERTIES OF PB1-XSNXSE

被引：0
|
作者：
ZLOMANOV, VP
LADYGIN, EA
PYREGOV, BP
SKIPETROV, EP
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：31 / 33
页数：3
相关论文
共 50 条
  • [21] Photodiodes based on Pb1-xSnxSe epitaxial films
    Jalilova, Ch. D.
    Aliyev, A. A.
    Faradjev, N. V.
    Alekperova, Sh. M.
    19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636
  • [22] CURRENT NOISE IN PB1-XSNXSE EPITAXIAL-FILMS
    FARHAT, A
    ZEMEL, JN
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 309 - 309
  • [23] Peculiarities of growth and electro-physical properties of epitaxial films of Pb1-xSnxSe:In
    Salaev, EY
    Nuriyev, IR
    Jalilova, CJ
    Faradjev, NV
    INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 1999, 3819 : 164 - 166
  • [24] Material properties of Pb1-xSnxSe epilayers on Si and their correlation with the performance of infrared photodiodes
    Fach, A
    John, J
    Muller, P
    Paglino, C
    Zogg, H
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (07) : 873 - 877
  • [25] PRESSURE STUDIES OF THE ENERGY-SPECTRUM OF IRRADIATION-INDUCED DEFECTS IN PB1-XSNXSE
    BRANDT, NB
    KOVALEV, BB
    SKIPETROV, EP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (06) : 487 - 490
  • [26] TO QUESTION OF NONRADIATED RECOMBINATION IN Pb1-xSnxSe LASER DIODES
    Gureev, D. M.
    VESTNIK SAMARSKOGO GOSUDARSTVENNOGO TEKHNICHESKOGO UNIVERSITETA-SERIYA-FIZIKO-MATEMATICHESKIYE NAUKI, 2008, (01): : 178 - 179
  • [27] PHASE-COMPOSITION OF THIN PB1-XSNXSE FILMS
    NURIEV, IR
    SALAEV, EY
    SHARIFOVA, AK
    INORGANIC MATERIALS, 1983, 19 (03) : 325 - 327
  • [28] ELECTRICAL PROPERTIES OF PB1-XSNXSE CRYSTALS GROWN FROM VAPOR-PHASE
    SHOTOV, AP
    KUCHERENKO, IV
    KOROLEV, YN
    CHIZHEVSKII, EG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1307 - 1311
  • [29] INFLUENCE OF HYDROSTATIC-PRESSURE ON EMISSION-SPECTRA OF PB1-XSNXSE LASERS
    ZASAVITSKII, II
    MATSONASHVILI, BN
    POGODIN, VI
    SHOTOV, AP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 467 - 470
  • [30] PHOTODIODES MADE OF PB1-XSNXSE SINGLE-CRYSTALS
    CHASHCHIN, SP
    BARYSHEV, NS
    AVERYANO.IS
    MARKINA, NP
    SAFYAN, TL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (08): : 1428 - +
12345