TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H

被引：33

作者：

MAIN, C

RUSSELL, R

BERKIN, J

MARSHALL, JM

机构：

[1] Dundee Coll of Technology, Dundee, Scotl, Dundee Coll of Technology, Dundee, Scotl

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 55卷 / 04期

关键词：

D O I：

10.1080/09500838708207555

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：189 / 195

页数：7

共 50 条

[11] THICKNESS DEPENDENCE OF THE ACOUSTOELECTRIC EFFECT IN N-TYPE A-SI-H
FRITZSCHE, H
CHEN, KJ
JOHANSON, R
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 199 - 203
[12] MEASUREMENTS OF THE ELECTRON-DENSITY IN N-TYPE A-SI-H
STREET, RA
ZESCH, J
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03): : L19 - L22
[13] PREPARATION-DEPENDENT RELAXATION IN N-TYPE A-SI-H
KROTZ, G
WIND, J
MULLER, G
PHILOSOPHICAL MAGAZINE LETTERS, 1989, 60 (02) : 67 - 71
[14] UNIVERSAL DOPANT AND DEFECT EQUILIBRATION KINETICS IN N-TYPE A-SI-H
WINER, K
JACKSON, WB
PHYSICAL REVIEW B, 1989, 40 (18): : 12558 - 12561
[15] CU/A-SI-H/A-SI-H(N-TYPE)/CR SCHOTTKY DIODES PREPARED BY A RF MAGNETRON SPUTTER TECHNIQUE
SERIN, N
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (07) : 1485 - 1492
[16] TRANSIENT PHOTOCONDUCTIVITY AND SCHOTTKY-BARRIER PROFILE DETERMINATION IN A-SI-H
DATTA, T
SILVER, M
JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 563 - 566
[17] INFLUENCE OF LIGHT-INDUCED DEFECTS ON THE TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H
WERNER, A
KUNST, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 791 - 794
[18] TRANSIENT-BEHAVIOR OF PHOTOCONDUCTIVITY OF A-SI-H IN DUAL BEAM MEASUREMENTS
QIU, CH
QIAN, SF
HAN, DX
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 587 - 590
[19] PRIMARY AND SECONDARY PHOTOCURRENTS IN N-TYPE AND P-TYPE A-SI-H FILMS
WELSCH, HM
FUHS, W
GREEB, KH
MELL, H
JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 567 - 570
[20] DENSITY OF GAP-STATES IN N-TYPE AND P-TYPE A-SI-H
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MELL, H
WEBER, K
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 257 - 260

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