AES AND SIMS ANALYSES OF A LOW-RESISTANCE OHMIC CONTACT LAYER OF GAP

被引：6
|
作者：
ZHANG, FJ
SANG, BS
LI, BJ
机构：
[1] Department of Physics, Lanzhou University, Lanzhou
来源：
APPLIED SURFACE SCIENCE | 1994年 / 78卷 / 01期
关键词：
D O I：
10.1016/0169-4332(94)90033-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
On the basis of a study of the metallurgical properties and the interface characteristics of the ohmic contact layer formed by p-GaP with Pd/Zn/Pd metal films [F. Zhang, Z. Song and J. Peng, Appl. Surf. Sci. 62 (1992) 83], we further analyze the profile distribution and atomic binding state of the elements in the contact layer by AES and SIMS.
引用
收藏
页码：71 / 75
页数：5
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