ELECTRONIC-STRUCTURE OF UNDOPED AND DOPED FULLERENES

被引：8

作者：

ROMBERG, H ^{[1
]}

SOHMEN, E ^{[1
]}

MERKEL, M ^{[1
]}

KNUPFER, M ^{[1
]}

ALEXANDER, M ^{[1
]}

GOLDEN, MS ^{[1
]}

ADELMANN, P ^{[1
]}

PIETRUS, T ^{[1
]}

FINK, J ^{[1
]}

SEEMANN, R ^{[1
]}

JOHNSON, RL ^{[1
]}

机构：

[1] UNIV HAMBURG, INST EXPTL PHYS 2, W-2000 HAMBURG 50, GERMANY

来源：

SYNTHETIC METALS | 1993年 / 56卷 / 2-3期

关键词：

D O I：

10.1016/0379-6779(93)90076-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure Of C60 has been studied by electron energy-loss spectroscopy (EELS) in transmission, and by high resolution photoemission (PES) studies. Information on the occupied and unoccupied pi, pi*, a and sigma* band structure is obtained by photoemission and C1s absorption EELS measurements, respectively. In addition, the dielectric function of undoped C60, as obtained from EELS measurements, show a clear gap of approximately 2eV and several well pronounced pi --> pi* transitions. Upon doping with Li, Na, K, Rb, Cs and Ca, the filling of the lowest unoccupied molecular orbital (LUMO) band has been probed by both PES and EELS. For doping with divalent Ca, in addition the LUMO+1 band gets partially filled. Strong non-rigid-band behaviour is observed. The results are compared with theoretical calculations.

引用

页码：3038 / 3043

页数：6

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