INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON

被引：0
|
作者：
ZOLOTUKHIN, AA [1 ]
KOVALENKO, AK [1 ]
MESHCHERYAKOVA, TM [1 ]
MILEVSKII, LS [1 ]
PAGAVA, TA [1 ]
机构：
[1] AA BAIKOV MET INST,MOSCOW,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：800 / 800
页数：1
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