ROOM-TEMPERATURE CARRIER RECOMBINATION IN INGAAS/GAAS QUANTUM-WELLS

被引：32
|
作者：
MARCINKEVICIUS, S
OLIN, U
TREIDERIS, G
机构：
[1] ROYAL INST TECHNOL,INST OPT RES,S-10044 STOCKHOLM 70,SWEDEN
[2] SEMICOND PHYS INST,2600 VILNIUS,LITHUANIA
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期
关键词：
D O I：
10.1063/1.354540
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room temperature recombination in InGaAs/GaAs single quantum wells has been studied by steady-state photoluminescence. Nonradiative recombination has been determined to be the prevailing recombination process. It occurs via the thermal carrier activation out of the well, followed by recombination in the barriers. The temperature dependence of the quantum well photoluminescence peak energy allows us to conclude that the main mechanism of radiative recombination at room temperature is of band-to-band origin.
引用
收藏
页码：3587 / 3589
页数：3
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