ELECTRON-BEAM INDUCED DAMAGE ON PASSIVATED METAL-OXIDE SEMICONDUCTOR-DEVICES

被引：0
|
作者：
GORLICH, S [1 ]
KUBALEK, E [1 ]
机构：
[1] UNIV DUISBURG GESAMTHSCH,FACHGEBIET WERKSTOFFE ELEKTROTECH,D-4100 DUISBURG 1,FED REP GER
来源：
SCANNING ELECTRON MICROSCOPY | 1985年
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
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页码：87 / 95
页数：9
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