2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

被引：0
|
作者：
Dirix, M. [1 ]
Koch, O. [1 ]
机构：
[1] Rhein Westfal TH Aachen, Inst High Frequency Technol, Melatener Str 25, D-52074 Aachen, Germany
来源：
ACTA POLYTECHNICA | 2009年 / 49卷 / 02期
关键词：
Class E; power amplifier; CLIER;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A 10 W class-E RF power amplifier (PA) is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated.
引用
收藏
页码：90 / 93
页数：4
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