SPUTTERING EFFECTS IN SI, SIO2 AND THE SI/SIO2 INTERFACE

被引：8
|
作者：
DOWNEY, SW
EMERSON, AB
机构：
[1] AT&T Bell Laboratories, Murray Hill, New Jersey, 07974
来源：
SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 01期
关键词：
D O I：
10.1002/sia.740200109
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO2 in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular formation during sputtering is significant with Xe+ at low energy (less-than-or-equal-to 4 keV) and a high angle of incidence (approximately 60-degrees from normal). Sputtering with Ar+ suppresses molecular formation. Because matrix effects are minimized with RIMS, pecularities in profiles at interfaces are easy to observe. The RIMS profiles of Ni and Co implants into SiO2 on Si show evidence of enhanced metal-silicon bonding at the oxide/substrate interface.
引用
收藏
页码：53 / 59
页数：7
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