RESPONSE OF SILICON DETECTOR FOR HIGH-ENERGY X-RAY COMPUTED-TOMOGRAPHY

被引:4
|
作者
MIYAI, H
KAWASAKI, S
KITAGUCHI, H
IZUMI, S
机构
[1] Energy Research Laboratory, Hitachi, Ltd, Ibaraki-ken 3 19-12, 7-2-1,Omika-cho Hitachi-shi
关键词
D O I
10.1109/23.322847
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The suitability of Si-SSD as a detector for high energy X-ray CT has been investigated. Two types of Si-SSDs which can take the place of ordinary scintillation detectors were proposed. Their predicted responses were compared with that of a CWO scintillation detector of almost the same dimensions by using the EGS4 Monte Carlo simulation code. The sensitivities of the sole-silicon detector and the metal-sandwiched detector were about ten times higher than that of the CWO scintillation detector at X-ray energies above 1 MeV. The metal-sandwiched detector was judged more useful than the sole Si-SSD when the width of X-ray beam was less than about 0.2 mm. Then the silicon semiconductor detector for high energy X-ray CT was fabricated and actual measurements of the depletion layer width and the electronic noise contribution were made.
引用
收藏
页码:999 / 1003
页数:5
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