THERMAL AND FLOW ISSUES IN THE DESIGN OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION REACTORS

The influence of the equipment design and deposition process parameters on the flow and temperature uniformity across the substrate for a vertical high speed metalorganic chemical vapor deposition (MOCVD) rotating disk reactor (RDR) was investigated. The substrate temperature uniformity was found to strongly depend upon process temperature and pressure, reactant flow, and wafer carrier rotation speed. With a single-zone heater element, the temperature uniformity could be optimized only for a limited field of process parameters. We have demonstrated a significant improvement to the substrate temperature uniformity over a wide range of process parameters by utilizing a multi-zone heater.