THE USE OF ELLIPSOMETRY FOR THE EVALUATION OF SIMOX BURIED OXIDES

被引：0
|
作者：
SCHMIDT, DN [1 ]
机构：
[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C122 / C122
页数：1
相关论文
共 50 条
  • [31] FIELD-DEPENDENT CHARGE TRAPPING EFFECTS IN SIMOX BURIED OXIDES AT VERY HIGH-DOSE
    FLAMENT, O
    HERVE, D
    MUSSEAU, O
    BONNEL, P
    RAFFAELLI, M
    LERAY, JL
    MARGAIL, J
    GIFFARD, B
    AUBERTONHERVE, AJ
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2132 - 2138
  • [32] Spectroscopic ellipsometry chraracterization of the interfacial roughness in simox wafers
    Li, WJ
    Song, ZR
    Tao, K
    Cheng, XH
    Yang, WW
    Yu, YH
    Wang, X
    Zou, SC
    Shen, DS
    [J]. THIN SOLID FILMS, 2004, 459 (1-2) : 63 - 66
  • [33] Spectroscopic ellipsometry of SIMOX (Separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer
    Jayatissa, AH
    Yamaguchi, T
    Nasu, M
    Aoyama, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2581 - 2586
  • [34] Cryogenic investigations of SIMOX buried oxide parameters
    Lysenko, VS
    Tyagulski, IP
    Osiyuk, IN
    Gomeniuk, YV
    [J]. PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS, 2002, 58 : 159 - 166
  • [35] Properties of the buried oxide layer in SIMOX structures
    Revesz, AG
    Hughes, HL
    [J]. MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 343 - 350
  • [36] The behaviour of deuterium incorporated into the buried oxide of SIMOX
    Rivera, A
    van Veen, A
    Schut, H
    de Nijs, JMM
    Balk, P
    Alkemade, PFA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 : 287 - 290
  • [37] ANOMALOUS DEFECTS IN BURIED OXIDE OF SIMOX STRUCTURE
    WANG, ZL
    CHEN, NX
    HUANG, C
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 474 - 477
  • [38] ATOMIC STRUCTURE OF THE BURIED OXIDE LAYER IN SIMOX WAFERS
    Shimura, T.
    Hosoi, T.
    Fukuda, K.
    Umeno, M.
    [J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2002, 58 : C349 - C349
  • [39] Improvement of buried oxide integrity in ITOX SIMOX wafers
    Ando, M
    Miyamura, Y
    Jablonski, J
    Saito, M
    Kitagawa, S
    Katayama, T
    [J]. 1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 12 - 13
  • [40] Impact of supplemental Si implantation into SIMOX buried oxide
    Krska, JHY
    Yoon, JU
    Kim, GN
    Joyner, K
    Nauka, K
    Chung, JE
    [J]. 1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 166 - 167
12345