POINT-DEFECTS IN III-V MATERIALS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE

被引：22

作者：

HAUTOJARVI, P ^{[1
]}

MAKINEN, J ^{[1
]}

PALKO, S ^{[1
]}

SAARINEN, K ^{[1
]}

CORBEL, C ^{[1
]}

LISZKAY, L ^{[1
]}

机构：

[1] CENS,INSTN,F-91191 GIF SUR YVETTE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期

关键词：

D O I：

10.1016/0921-5107(93)90216-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present understanding of the point defects in GaAs and InP grown n by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type accepters obtained by positron annihilation are given. Depending on the growth temperature. Ga vacancies or small vacancy clusters are seen in LT GaAs in the concentration range 10(18) Cm-(3). No signal from Ga antisites is found. The LT LnP layers contain vacancies. identified as In vacancies, in the concentration range 10(18) cm-(3). Ion-type acceptors, probably In antisites, are also seen in concentrations of 10(17)cm-(3). The annealed layer contains small vacancy clusters.

引用

页码：16 / 22

页数：7

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