ACTIVATION-ENERGIES OF THE 1/3 AND 2/3 FRACTIONAL QUANTUM HALL-EFFECT IN GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引:54
|
作者
KAWAJI, S [1 ]
WAKABAYASHI, J [1 ]
YOSHINO, J [1 ]
SAKAKI, H [1 ]
机构
[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
关键词
D O I
10.1143/JPSJ.53.1915
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1915 / 1918
页数:4
相关论文
共 50 条
  • [21] Electron multiplication in AlxGa1-xAs/GaAs heterostructures
    Chia, CK
    David, JPR
    Rees, GJ
    Robson, PN
    Plimmer, SA
    Grey, R
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3877 - 3879
  • [22] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
    Kim, DS
    Ko, HS
    Kim, YM
    Rhee, SJ
    Hong, SC
    Yee, DS
    Woo, JC
    Choi, HJ
    Ihm, J
    [J]. 17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
  • [23] INTERSUBBAND SCATTERING IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
    DELANGE, W
    BLOM, FAP
    VANHALL, PJ
    KOENRAAD, PM
    WOLTER, JH
    [J]. PHYSICA B, 1993, 184 (1-4): : 216 - 220
  • [24] Electron clusters in quantum Hall effect in AlxGa1-xAs
    Shrivastava, Keshav N.
    [J]. NATIONAL ACADEMY SCIENCE LETTERS-INDIA, 2011, 34 (3-4): : 137 - 142
  • [25] Quantum confined stark effect and optical absorption in AlxGa1-xAs/GaAs/AlxGa1-xAs single quantum well
    Panda, S
    Panda, BK
    Fung, S
    Beling, CD
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 194 (02): : 547 - 562
  • [26] Effect of doping on photoluminescence upconversion in GaAs/AlxGa1-xAs heterostructures
    Cheong, HM
    Kim, D
    Hanna, MC
    Mascarenhas, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (01) : 58 - 60
  • [27] MAGNETIC-FIELD DEPENDENCE OF ACTIVATION-ENERGIES IN THE FRACTIONAL QUANTUM HALL-EFFECT
    BOEBINGER, GS
    CHANG, AM
    STORMER, HL
    TSUI, DC
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (15) : 1606 - 1609
  • [28] OSCILLATIONS IN THE THERMAL-CONDUCTIVITY OF A GAAS/ALXGA1-XAS HETEROSTRUCTURE IN THE FRACTIONAL QUANTUM HALL REGIME
    BAYOT, V
    SANTOS, MB
    SHAYEGAN, M
    [J]. PHYSICAL REVIEW B, 1992, 46 (11): : 7240 - 7243
  • [29] MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH PARALLEL CONDUCTING LAYER IN ALXGA1-XAS
    JIANG, PH
    ZHU, YT
    SUN, DZ
    ZENG, YP
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 145 (02): : K111 - K114
  • [30] Transport studies of AlxGa1-xAs/GaAs quantum heterostructures using BEEM
    Narayanamurti, V
    [J]. ADVANCES IN SOLID STATE PHYSICS, VOL 35, 1996, 35 : 243 - 256