HIGH-TEMPERATURE CAMERA FOR INSITU EXAMINATION OF SEMICONDUCTOR CRYSTALS BY X-RAY TOPOGRAPHY

被引：0
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作者：
SMOLSKII, IL
DILBARYAN, GA
ROZHANSKII, VN
机构：
来源：
INDUSTRIAL LABORATORY | 1984年 / 50卷 / 05期
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D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
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页码：465 / 467
页数：3
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