共 50 条
- [21] MEV ION-IMPLANTATION IN GAAS TECHNOLOGY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 592 - 599
- [24] ION-IMPLANTATION OF BORON IN GAAS DEVICES [J]. COMSAT TECHNICAL REVIEW, 1983, 13 (02): : 437 - 450
- [25] INFLUENCE OF ION-IMPLANTATION ON THE LUMINESCENCE OF GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (02): : 597 - 601
- [26] ION-IMPLANTATION OF DIATOMIC SULFUR INTO GAAS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 318 - 318
- [27] PROPERTY OF DISORDERED GAAS BY ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) : 1455 - 1456
- [28] FABRICATION OF GAAS/ALGAAS QUANTUM WELL LASERS WITH MEV OXYGEN ION-IMPLANTATION [J]. ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 367 - 372
- [30] THE FABRICATION OF GAAS STRUCTURES FOR FETS AND MICROWAVE MONOLITHIC CIRCUITS BY DIRECT ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY): : 506 - 509