SOLID-PHASE EPITAXY OF SILICON ON GALLIUM-PHOSPHIDE

被引：6

作者：

DEJONG, T

SARIS, FW

TAMMINGA, Y

HAISMA, J

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

[2] NEDERLANDSE PHILIPS BEDRIJVEN BV,PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：445 / 446

页数：2

共 50 条

[11] INFRARED-ABSORPTION OF SILICON ISOTOPES IN GALLIUM-PHOSPHIDE
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[12] GAS-PHASE SYNTHESIS OF GALLIUM-PHOSPHIDE
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[14] DOPING OF GALLIUM-PHOSPHIDE WITH ZINC FROM THE GAS-PHASE DURING LIQUID-PHASE EPITAXY
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[18] SILICON-COPPER AND SILICON-ZINC COMPLEXES IN GALLIUM-PHOSPHIDE
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[19] OPTOELECTRONIC BISTABILITY IN GALLIUM-PHOSPHIDE
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