TEMPERATURE-ELECTRIC INSTABILITY IN MANGANESE-DOPED SILICON

被引：0
|
作者：
BAKHADYRKHANOV, MK [1 ]
KAMILOV, TS [1 ]
机构：
[1] VI LENIN STATE UNIV,TASHKENT,UZSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 04期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：452 / 452
页数：1
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