RESONANT RAMAN-SCATTERING DUE TO BOUND-CARRIER SPIN-FLIP IN GAAS ALXGA1-XAS QUANTUM-WELLS

We study Raman scattering by spin flips of acceptor-bound holes in p-type GaAs/AlxGa1-xAs multiple quantum wells in normal and tilted magnetic fields. It is shown that different mechanisms are responsible for the scattering under excitation in resonance with the following complexes; exciton bound to neutral acceptor (A0X) and a localized exciton neighboring as a neutral acceptor. It is demonstrated that in the Faraday backscattering geometry the A0X-mediated scattering process can be considered as a double spin flip because it includes an acoustic-phonon-induced spin flip of an electron in the photocreated A0X complex. In tilted magnetic fields an additional satellite line A0X' appears in the Raman spectrum due to the Zeeman interaction of the electron spin with the in-plane field component. The neutral-acceptor and electron g factors are directly measured as a function of the quantum-well width. Two other lines of the A0X-related scattering are attributed to the bound-hole interlevel transitions +/-3/2 --> -/+1/2, which allow the determination of the interlevel splitting and an analysis of its inhomogeneous broadening induced by fluctuations in the well thickness.