NON-RADIATIVE RECOMBINATION PROCESSES AND RELATED PHENOMENA IN GE DOPED AS2SE3 GLASSES

被引：9
|
作者：
KITAMURA, M
OGAWA, T
ARAI, T
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1983年 / 52卷 / 07期
关键词：
D O I：
10.1143/JPSJ.52.2561
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：2561 / 2570
页数：10
相关论文
共 50 条
  • [11] Structural properties of chalcogenide glasses As2Se3 doped with manganese
    Paiuk, O. P.
    Revutska, L. O.
    Stronski, A., V
    Gudymenko, A. Yo
    Stanchu, H., V
    Gubanova, A. A.
    Kryskov, Ts A.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2016, 19 (02) : 205 - 207
  • [12] Properties and structure of Ag-doped As2Se3 glasses
    Zha, Congji
    Smith, Anita
    Prasad, Amrita
    Wang, Rongping
    Madden, Steve
    Luther-Davies, Barry
    JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2007, 16 (01) : 49 - 57
  • [13] A NON-RADIATIVE RECOMBINATION IN GAAS0.61P0.39-GE
    SNYDER, PG
    GUNDERSEN, MA
    MYLES, CW
    HENRY, HG
    BYLANDER, EG
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (08) : 853 - 855
  • [14] Study of indentation microhardness of bismuth-doped As2Se3 glasses
    Kavetskyy, T.
    Borc, J.
    Sangwal, K.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (07): : 755 - 760
  • [15] Study of the radiative and non-radiative recombination processes at dislocations in silicon by photoluminescence and LBIC measurements
    Pizzini, S
    Binetti, S
    Acciarri, M
    Casati, M
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 117 - 122
  • [16] RADIATIVE RECOMBINATION CENTER IN AS2SE3 AS STUDIED BY OPTICALLY DETECTED MAGNETIC-RESONANCE
    RISTEIN, J
    TAYLOR, PC
    OHLSEN, WD
    WEISER, G
    PHYSICAL REVIEW B, 1990, 42 (18): : 11845 - 11856
  • [17] RELAXATION PROCESSES IN GLASSES AS2S3 AND AS2SE3 IN THE RANGE OF SOFTENING TEMPERATURE
    BILANICH, VS
    GORVAT, AA
    YURKIN, IM
    TURYANITSA, ID
    PINZENIK, VP
    UKRAINSKII FIZICHESKII ZHURNAL, 1990, 35 (12): : 1841 - 1844
  • [18] Comparative study of physical properties of As2Se3 and (As2Se3)90Ge10 glassy alloys doped with metallic impurities
    Sharma, Ishu
    Elsaeedy, H. I.
    Ismail, YasserA. M.
    Dahshan, A.
    Sharda, Sunanda
    Kumar, Sanjay
    Aly, K. A.
    Sharma, Pankaj
    CERAMICS INTERNATIONAL, 2024, 50 (20) : 38741 - 38747
  • [19] Radiative and non-radiative recombination processes in ultra-violet InGaN light emitting diodes
    Narukawa, Y
    Saijou, S
    Kawakami, Y
    Fujita, S
    Mukai, T
    Nakamura, S
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 288 - 291
  • [20] NEW INSIGHT INTO RECOMBINATION AND THERMALIZATION IN AS2SE3
    WEISER, G
    RISTEIN, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1131 - 1134
12345