RESIDUAL-STRESSES IN CRYSTAL-GROWTH

被引：9

作者：

BHIHE, CK

MATAGA, PA

HUTCHINSON, JW

RAJENDRAN, S

KALEJS, JP

机构：

[1] MOBIL SOLAR ENERGY CORP,BILLERICA,MA 01821

[2] HARVARD UNIV,DEPT APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)91252-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A numerical model of the growth of thin sheets of silicon which incorporates creep after solidification as well as thermoelastic effects is described. A previously unremarked feature of the growth mechanics, the ''misfit strain'', and its relationship to the residual stresses in the sheet is explored. A numerical investigation of the influence of temperature profile on residual stresses is described.

引用

页码：86 / 90

页数：5

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