RESIDUAL-STRESSES IN CRYSTAL-GROWTH

被引：9
|
作者：
BHIHE, CK
MATAGA, PA
HUTCHINSON, JW
RAJENDRAN, S
KALEJS, JP
机构：
[1] MOBIL SOLAR ENERGY CORP,BILLERICA,MA 01821
[2] HARVARD UNIV,DEPT APPL SCI,CAMBRIDGE,MA 02138
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(94)91252-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A numerical model of the growth of thin sheets of silicon which incorporates creep after solidification as well as thermoelastic effects is described. A previously unremarked feature of the growth mechanics, the ''misfit strain'', and its relationship to the residual stresses in the sheet is explored. A numerical investigation of the influence of temperature profile on residual stresses is described.
引用
收藏
页码：86 / 90
页数：5
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