ON THE INAPPROPRIATE USE OF THE INTRINSIC LEVEL AS A MEASURE OF THE ELECTROSTATIC POTENTIAL IN SEMICONDUCTOR-DEVICES

被引：8

|

作者：

MARSHAK, AH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 03期

关键词：

D O I：

10.1109/EDL.1985.26069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：128 / 129

页数：2

相关论文

共 38 条

[1] ON THE INAPPROPRIATE USE OF THE INTRINSIC LEVEL AS A MEASURE OF THE ELECTROSTATIC POTENTIAL IN SEMICONDUCTOR DEVICES.
Marshak, A.H.
Electron device letters, 1985, EDL-6 (03): : 128 - 129
[2] ELECTROSTATIC DISCHARGE THERMAL FAILURE IN SEMICONDUCTOR-DEVICES
DWYER, VM
FRANKLIN, AJ
CAMPBELL, DS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (11) : 2381 - 2387
[3] USE OF SEMICONDUCTOR-DEVICES IN INTEGRATING DOSIMETRY
MUSILEK, L
SEDA, J
KERNENERGIE, 1990, 33 (01): : 9 - 12
[4] SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS
LENGELER, B
CRYOGENICS, 1974, 14 (08) : 439 - 447
[5] AN EXPERIMENTAL INVESTIGATION OF THE ELECTROSTATIC DISCHARGE (ESD) MECHANISM IN PACKAGED SEMICONDUCTOR-DEVICES
JON, MC
WELSHER, TL
JOURNAL OF ELECTROSTATICS, 1994, 32 (01) : 43 - 70
[6] CORONA DISCHARGE - ELECTROSTATIC METHOD FOR DEPOSITION OF POWDERED PASSIVATION GLASS ON SEMICONDUCTOR-DEVICES
COMIZZOLI, RB
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1977, 13 (03): : 322 - 328
[7] A CLOSED-FORM MODEL FOR ELECTROSTATIC DISCHARGE THERMAL RUNAWAY IN SEMICONDUCTOR-DEVICES
CHOI, HH
DEMASSA, TA
SOLID-STATE ELECTRONICS, 1993, 36 (11) : 1511 - 1514
[8] CURRENT TRANSPORT OVER PARABOLIC POTENTIAL BARRIERS IN SEMICONDUCTOR-DEVICES
CROWELL, CR
HAFIZI, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1087 - 1095
[9] USE OF SEMICONDUCTOR-DEVICES IN DOSIMETRY OF HIGH-ENERGY ELECTRONS
SCARLAT, F
BALTATEANU, N
RADIATION RESEARCH, 1974, 59 (01) : 53 - 53
[10] USE OF BF-2(+) IMPLANTATION IN THE PRODUCTION OF SEMICONDUCTOR-DEVICES
CHERNYAEV, AV
CHERNETSKII, TP
SOVIET MICROELECTRONICS, 1979, 8 (06): : 377 - 380

← 1 2 3 4 →