MONTE-CARLO SIMULATION OF SURFACE-REACTIONS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

被引：10
|
作者：
SHIRAFUJI, T
CHEN, WM
YAMAMUKA, M
TACHIBANA, K
机构：
[1] Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo-ku Kyoto, 606, Matsugasaki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期
关键词：
SURFACE REACTION; MONTE-CARLO SIMULATION; CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON; IN-SITU ELLIPSOMETRY;
D O I：
10.1143/JJAP.32.4946
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A three-dimensional Monte-Carlo simulation of surface reactions in plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon thin films has been carried out. The increase of Si-H-2 bonds in the films with increase of SiH2 radical density was explained naturally in terms of surface roughness caused by high sticking probability of SiH2. The effective roughness monitored as voids by in situ ellipsometry supports the simulated results.
引用
收藏
页码：4946 / 4947
页数：2
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